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Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
Technical Data
ATF-35143
Features
* Low Noise Figure * Excellent Uniformity in Product Specifications * Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70) * Tape-and-Reel Packaging Option Available
Surface Mount Package SOT-343
Description
Agilent's ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured performance, ATF-35143 is suitable for applications in cellular and PCS base stations, LEO systems, MMDS, and other systems requiring super low noise figure with good intercept in the 450 MHz to 10 GHz frequency range. Other PHEMT devices in this family are the ATF-34143 and the ATF-33143. The typical specifications for these devices at 2 GHz are shown in the table below:
Pin Connections and Package Marking
Specifications
* 0.4 dB Noise Figure * 18 dB Associated Gain * 11 dBm Output Power at 1 dB Gain Compression * 21 dBm Output 3rd Order Intercept
SOURCE
5Px
Gate Width 1600 800 400
1.9 GHz; 2 V, 15 mA (Typ.)
DRAIN
SOURCE
GATE
Note: Top View. Package marking provides orientation and identification. "5P" = Device code "x" = Date code character. A new character is assigned for each month, year.
Applications
* Low Noise Amplifier for Cellular/PCS Handsets * LNA for WLAN, WLL/RLL, LEO, and MMDS Applications * General Purpose Discrete PHEMT for Other Ultra Low Noise Applications
Part No. ATF-33143 ATF-34143 ATF-35143 Bias Point 4 V, 80 mA 4 V, 60 mA 2 V, 15 mA NF (dB) Ga (dB) OIP3 (dBm) 0.5 0.5 0.4 15.0 17.5 18.0 33.5 31.5 21.0
2
ATF-35143 Absolute Maximum Ratings[1]
Symbol VDS VGS VGD IDS Pdiss Pin max TCH TSTG jc Parameter Drain - Source Voltage [2] Gate - Source Voltage [2] Gate Drain Voltage [2] Drain Current [2] Total Power Dissipation [4] RF Input Power Channel Temperature Storage Temperature Thermal Resistance [5] Units V V V mA mW dBm C C C/W Absolute Maximum 5.5 -5 -5 Idss[3] 300 14 160 -65 to 160 310
Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiesent conditions. 3. VGS = 0 V 4. Source lead temperature is 25C. Derate 3.2 mW/C for TL > 67C. 5. Thermal resistance measured using 150C Liquid Crystal Measurement method.
Product Consistency Distribution Charts [7, 8]
120 100 80 IDS (mA)
0V +0.6 V
120 100 80
Cpk = 1.73 Std = 0.35
-3 Std
60 40
+3 Std
60 40
-0.6 V
20 0 0 2 4 VDS (V) 6 8
20 0 19
20
21
22
23
24
OIP3 (dBm)
Figure 1. Typical Pulsed I-V Curves[6]. (VGS = -0.2 V per step)
200 Cpk = 3.7 Std = 0.03
Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA. LSL=19.0, Nominal=20.9, USL=23.0
160
Cpk = 2.75 Std = 0.17
160 120 120
-3 Std
+3 Std
80
-3 Std
+3 Std
80 40
40
0 0.2
0.3
0.4
0.5
0.6
0.7
0 16
17
18 GAIN (dB)
19
20
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 15 mA. LSL=0.2, Nominal=0.37, USL=0.7
Figure 4. Gain @ 2 GHz, 2 V, 15 mA. LSL=16.5, Nominal=18.0, USL=19.5
Notes: 6. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the maximum Pdiss and Pin max ratings are not exceeded.
7. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits.
8. Measurements made on production test
board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements. Circuit losses have been deembedded from actual measurements.
3
ATF-35143 Electrical Specifications
TA = 25C, RF parameters measured in a test circuit for a typical device Symbol Idss VP [1] Id gm[1] IGDO Igss NF
[1]
Parameters and Test Conditions Saturated Drain Current Pinchoff Voltage Quiescent Bias Current Transconductance Gate to Drain Leakage Current Gate Leakage Current f = 2 GHz Noise Figure[3] f = 900 MHz f = 2 GHz VDS = 1.5 V, VGS = 0 V VDS = 1.5 V, IDS = 10% of Idss VGS = 0.45 V, VDS = 2 V VDS = 1.5 V, gm = Idss /VP VGD = 5 V VGD = VGS = -4 V VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA
Units mA V mA mmho A A dB dB dB dB dBm dBm dBm dBm
Min. Typ.[2] 40 -0.65 -- 90 -- 65 -0.5 15 120 10 0.4 0.5 0.3 0.4 16.5 14 18 16 20 18 21 14 19 14 10 8 9 9
Max. 80 -0.35 -- -- 250 150 0.7 0.9
Ga
Associated Gain[3]
19.5 18
f = 900 MHz f = 2 GHz
OIP3
Output Order Intercept Point [4, 5]
3rd
P1dB
1 dB Compressed Intercept Point [4]
VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA f = 900 MHz VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA f = 2 GHz VDS = 2 V, IDSQ = 15 mA VDS = 2 V, IDSQ = 5 mA f = 900 MHz VDS = 2 V, IDSQ = 15 mA VDS = 2 V, IDSQ = 5 mA
19
Notes: 1. Guaranteed at wafer probe level 2. Typical value determined from a sample size of 450 parts from 9 wafers. 3. 2V 5 mA min/max data guaranteed via the 2 V 15 mA production test. 4. Measurements obtained using production test board described in Figure 5. 5. Pout = -10 dBm per tone
Input
50 Ohm Transmission Line Including Gate Bias T (0.5 dB loss)
Input Matching Circuit _mag = 0.66 _ang = 5 (0.4 dB loss)
DUT
50 Ohm Transmission Line Including Drain Bias T (0.5 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements.
4
ATF-35143 Typical Performance Curves
30
OIP3
30
25
OIP3, P1dB (dBm) OIP3, P1dB (dBm)
25
OIP3
20 15 10 5 0 0 10 20 30 IDSQ (mA) 40 50 60
P1dB 2V 3V 4V
20
P1dB
15
10
2V 3V 4V
5 0 10 20 30 IDSQ (mA) 40 50 60
Figure 6. OIP3 and P1dB vs. Bias at 2 GHz.[1,2]
20
2V 3V 4V
Figure 7. OIP3 and P1dB vs. Bias at 900 MHz.[1,2]
2.5 24
2V 3V 4V
2.5
19
Ga
2
22
Ga
2
NF (dB)
Ga (dB)
17
NF
1
18
NF
1
16
0.5
16
0.5
15 0 10 20 30 IDSQ (mA) 40 50 60
0
14 0 10 20 30 IDSQ (mA) 40 50 60
0
Figure 8. NF and Ga vs. Bias at 2 GHz.[1]
Figure 9. NF and Ga vs. Bias at 900 MHz.[1]
20
25 20 15 10 5 0 -5 0 20 40 IDS (mA) 60 80
2V 3V 4V
15
P1dB (dBm)
P1dB (dBm)
10
5
0
2V 3V 4V
-5 0 20 40 IDS (mA) 60 80
Figure 10. P1dB vs. Bias (Active Bias) Tuned for NF @ 2V, 15 mA at 2 GHz.[1]
Figure 11. P1dB vs. Bias (Active Bias) Tuned for NF @ 2V, 15 mA at 900 MHz.[1]
Notes: 1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V 15 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
NF (dB)
Ga (dB)
18
1.5
20
1.5
5
ATF-35143 Typical Performance Curves, continued
1.50 1.25 20 1.00 25
5 mA 15 mA 30 mA
Fmin (dB)
Fmin (dB)
5 mA 15 mA 30 mA
0.75 0.50
15
10
0.25 0 0 2 4 6
5 8 10 0 2 4 6 8 10 FREQUENCY (GHz) FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 2 V.
22 1.0
Figure 13. Associated Gain vs. Frequency and Current at 2 V.
25
20
0.8
Ga (dB)
NF (dB)
18
25C -40C 85C
0.6
OIP3, P1dB (dBm)
20
15
25C -40C 85C
16
0.4
14
0.2
10
12 0 2 4 6 8 FREQUENCY (GHz)
0
5 0 2 4 6 8 FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency and Temperature, VDS = 2 V, IDS = 15 mA.
25 2.5
Figure 15. OIP3 and P1dB vs. Frequency and Temperature[1,2], VDS = 2 V, IDS = 15 mA.
25 3 2.5 2 1.5 1
P1dB OIP3 Gain NF
OIP3, P1dB (dBm), Gain (dB)
OIP3, P1dB (dBm), Gain (dB)
20
2
20 15 10 5 0 -5 0 20 40 IDS (mA) 60
10
P1dB OIP3 Gain NF
1
5
0.5
NF (dB)
0.5 0 80
0 0 20 40 IDS (mA) 60
0 80
Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1] (Active Bias, 2 V, 3.9 GHz).
Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1] (Active Bias, 2 V, 5.8 GHz).
Notes: 1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
NF (dB)
15
1.5
6
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 5 mA
Freq. GHz 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 Mag. 0.99 0.98 0.97 0.94 0.91 0.90 0.85 0.81 0.72 0.66 0.62 0.60 0.60 0.62 0.66 0.70 0.72 0.74 0.76 0.82 0.82 0.84 0.86 S11 Ang. -16.90 -26.37 -34.76 -50.59 -58.26 -65.74 -80.62 -95.48 -125.99 -156.09 174.97 145.61 118.39 93.15 71.31 50.91 31.04 11.26 -3.08 -14.26 -26.64 -38.94 -54.78 dB 13.34 13.29 13.16 12.83 12.66 12.44 12.04 11.61 10.71 9.79 8.93 8.06 7.20 6.26 5.43 4.58 3.64 2.56 1.45 0.43 -0.72 -1.83 -3.02 S21 Mag. 4.64 4.62 4.55 4.38 4.30 4.19 4.00 3.81 3.43 3.09 2.80 2.53 2.29 2.06 1.87 1.69 1.52 1.34 1.18 1.05 0.92 0.81 0.71 Ang. 166.04 157.78 150.72 137.02 130.38 123.90 111.27 99.08 75.75 53.63 32.77 12.43 -7.12 -26.14 -44.14 -62.85 -81.42 -99.46 -115.94 -132.24 -149.24 -164.44 179.28 dB -31.70 -28.18 -25.85 -22.73 -21.62 -20.72 -19.33 -18.27 -17.08 -16.48 -16.14 -16.08 -16.31 -16.59 -16.89 -17.14 -17.52 -18.13 -18.79 -19.25 -19.58 -19.74 -20.18 S12 Mag. 0.026 0.039 0.051 0.073 0.083 0.092 0.108 0.122 0.140 0.150 0.156 0.157 0.153 0.148 0.143 0.139 0.133 0.124 0.115 0.109 0.105 0.103 0.098 S22 Ang. 77.91 71.12 65.76 54.85 49.69 44.45 34.61 25.21 6.95 -9.83 -25.73 -41.00 -54.14 -67.05 -78.09 -88.99 -100.38 -111.06 -119.00 -127.12 -135.42 -143.49 -152.36 Mag. 0.73 0.72 0.71 0.68 0.67 0.65 0.62 0.59 0.52 0.45 0.38 0.31 0.25 0.20 0.16 0.14 0.17 0.22 0.28 0.34 0.42 0.49 0.56 Ang. -12.47 -17.53 -23.33 -34.88 -40.49 -46.03 -56.68 -66.71 -85.11 -102.71 -120.16 -138.01 -157.10 -178.27 157.62 121.82 82.33 53.17 27.32 6.01 -10.69 -22.32 -35.90 MSG/MAG dB 22.52 20.83 19.50 17.78 17.13 16.58 15.69 14.94 13.89 13.13 12.53 12.07 11.75 11.19 9.63 8.81 7.87 6.79 5.86 5.89 4.84 4.62 4.04
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 5 mA Freq. Fmin GHz dB 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.10 0.12 0.14 0.20 0.23 0.27 0.33 0.39 0.52 0.64 0.77 0.89 1.02 1.14 1.27 opt Mag. 0.91 0.87 0.86 0.81 0.78 0.76 0.71 0.66 0.58 0.52 0.47 0.43 0.41 0.40 0.41 Ang. 6.4 15.0 17.2 28.0 33.4 38.8 50.0 61.9 87.2 114.4 143.2 173.5 -155.2 -122.9 -90.1 Rn/50 0.22 0.22 0.22 0.22 0.21 0.21 0.19 0.17 0.13 0.09 0.06 0.05 0.07 0.13 0.24 Ga dB 19.3 17.9 17.5 16.3 15.8 15.4 14.7 14.0 12.7 11.5 10.4 9.5 8.7 8.0 7.5
25 20
MSG
MSG/MAG and S21 (dB)
15 10
S21 MAG
5 0 -5 0 5 10 15 20 FREQUENCY (GHz)
Figure 18. MSG/MAG and |S21|2 vs. Frequency at 2 V, 5 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
7
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA
Freq. GHz 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 Mag. 0.99 0.97 0.95 0.91 0.89 0.86 0.81 0.76 0.66 0.61 0.58 0.57 0.58 0.61 0.65 0.69 0.72 0.74 0.77 0.82 0.82 0.84 0.86 S11 Ang. -18.75 -29.11 -38.28 -55.52 -63.78 -71.82 -87.59 -103.22 -134.81 -165.34 165.88 137.00 110.78 86.75 66.25 46.88 27.76 8.62 -5.28 -16.03 -28.32 -40.43 -56.14 dB 15.89 15.79 15.61 15.17 14.92 14.65 14.11 13.54 12.40 11.29 10.27 9.27 8.33 7.32 6.44 5.54 4.56 3.45 2.33 1.29 0.19 -0.87 -1.99 S21 Mag. 6.23 6.16 6.03 5.73 5.57 5.40 5.08 4.76 4.17 3.67 3.26 2.91 2.61 2.32 2.10 1.89 1.69 1.49 1.31 1.16 1.02 0.91 0.80 Ang. 164.76 155.98 148.42 133.92 127.01 120.27 107.36 95.04 71.95 50.43 30.28 10.68 -8.09 -26.38 -43.90 -61.97 -79.90 -97.18 -112.92 -128.66 -144.87 -159.49 -175.19 dB -32.40 -28.87 -26.56 -23.61 -22.62 -21.72 -20.35 -19.41 -18.27 -17.65 -17.33 -17.14 -17.14 -17.20 -17.20 -17.27 -17.39 -17.79 -18.20 -18.56 -18.79 -18.79 -19.33 S12 Mag. 0.024 0.036 0.047 0.066 0.074 0.082 0.096 0.107 0.122 0.131 0.136 0.139 0.139 0.138 0.138 0.137 0.135 0.129 0.123 0.118 0.115 0.115 0.108 S22 Ang. 77.63 70.58 64.88 54.16 49.11 44.08 34.60 25.71 9.04 -5.97 -20.15 -33.84 -45.60 -57.65 -68.22 -79.30 -90.87 -102.19 -110.80 -120.09 -129.92 -139.60 -149.17 Mag. 0.63 0.61 0.60 0.57 0.56 0.54 0.51 0.47 0.41 0.34 0.27 0.21 0.17 0.13 0.11 0.14 0.19 0.26 0.33 0.39 0.45 0.51 0.57 Ang. -14.09 -19.69 -26.10 -38.73 -44.79 -50.70 -61.95 -72.47 -91.47 -110.05 -129.24 -150.49 -174.77 154.01 118.18 78.36 49.57 29.95 9.45 -7.98 -22.30 -32.23 -44.43 MSG/MAG dB 24.14 22.30 21.08 19.39 18.75 18.19 17.23 16.48 15.34 14.47 13.80 13.21 12.73 10.69 9.85 9.16 8.34 7.35 6.51 6.51 5.48 5.24 4.72
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 10 mA Freq. Fmin opt GHz dB Mag. Ang. 0.5 0.10 0.88 5.0 0.9 0.11 0.84 14.0 1.0 0.12 0.83 16.0 1.5 0.17 0.77 26.0 1.8 0.20 0.74 31.9 2.0 0.23 0.71 37.3 2.5 0.29 0.66 48.6 3.0 0.34 0.60 60.6 4.0 0.46 0.52 86.8 5.0 0.58 0.45 115.3 6.0 0.69 0.40 145.8 7.0 0.81 0.37 177.7 8.0 0.92 0.35 -149.3 9.0 1.04 0.35 -115.6 10.0 1.16 0.37 -81.8 Rn/50 0.15 0.15 0.15 0.15 0.15 0.14 0.14 0.12 0.12 0.08 0.05 0.05 0.07 0.12 0.22 Ga dB 20.5 19.0 18.6 17.5 16.9 16.4 15.7 15.0 13.6 12.4 11.3 10.3 9.5 8.8 8.3
30 25
MSG/MAG and S21 (dB)
20
MSG
15 10 5 0 -5 0 5 10 15 20 FREQUENCY (GHz)
S21 MAG
Figure 19. MSG/MAG and |S21|2 vs. Frequency at 2 V, 10 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
8
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 15 mA
Freq. GHz 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 Mag. 0.99 0.97 0.95 0.90 0.87 0.84 0.79 0.73 0.64 0.59 0.56 0.56 0.57 0.60 0.64 0.68 0.72 0.74 0.77 0.82 0.82 0.84 0.86 S11 Ang. -19.75 -30.58 -40.15 -58.08 -66.65 -74.93 -91.13 -107.08 -139.07 -169.70 161.74 133.19 107.56 84.16 64.19 45.46 26.66 7.70 -5.93 -16.54 -28.76 -40.79 -56.40 dB 17.02 16.90 16.69 16.18 15.90 15.59 14.97 14.34 13.09 11.90 10.81 9.77 8.78 7.75 6.86 5.93 4.93 3.80 2.68 1.63 0.54 -0.49 -1.60 S21 Mag. 7.10 7.00 6.83 6.44 6.23 6.02 5.61 5.21 4.51 3.93 3.47 3.08 2.75 2.44 2.20 1.98 1.76 1.55 1.36 1.21 1.06 0.95 0.83 Ang. 164.04 154.98 147.18 132.28 125.22 118.41 105.38 93.08 70.17 49.03 29.27 10.04 -8.35 -26.29 -43.56 -61.33 -78.94 -95.93 -111.53 -126.76 -142.70 -157.02 -172.47 dB -32.77 -29.37 -27.13 -24.15 -23.10 -22.27 -20.92 -20.00 -18.94 -18.27 -17.79 -17.59 -17.46 -17.39 -17.33 -17.27 -17.27 -17.59 -17.92 -18.20 -18.49 -18.49 -18.94 S12 Mag. 0.023 0.034 0.044 0.062 0.070 0.077 0.090 0.100 0.113 0.122 0.129 0.132 0.134 0.135 0.136 0.137 0.137 0.132 0.127 0.123 0.119 0.119 0.113 S22 Ang. 77.60 70.54 64.80 54.23 49.25 44.36 35.36 26.85 11.15 -2.96 -16.43 -29.47 -40.80 -52.63 -63.33 -74.77 -86.46 -98.11 -107.51 -117.16 -127.03 -137.06 -147.50 Mag. 0.57 0.55 0.54 0.51 0.49 0.48 0.44 0.41 0.35 0.29 0.23 0.17 0.14 0.11 0.12 0.16 0.22 0.29 0.36 0.41 0.47 0.53 0.58 Ang. -14.99 -20.86 -27.61 -40.74 -46.95 -53.06 -64.59 -75.32 -94.59 -113.89 -134.46 -158.65 172.14 134.01 95.85 63.20 40.01 23.11 3.55 -12.09 -26.21 -35.57 -47.29 MSG/MAG dB 24.89 23.05 21.91 20.17 19.53 18.93 17.95 17.17 16.01 15.09 14.30 13.68 12.29 10.74 9.99 9.34 8.57 7.62 6.79 6.76 5.81 5.55 5.06
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 15 mA Freq. Fmin opt GHz dB Mag. Ang. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.10 0.13 0.14 0.19 0.22 0.23 0.29 0.34 0.45 0.56 0.67 0.79 0.90 1.01 1.12 0.88 0.83 0.82 0.76 0.72 0.70 0.64 0.58 0.49 0.42 0.37 0.34 0.33 0.34 0.36 4.5 13.1 15.3 26.1 32.6 36.9 48.5 60.9 87.9 117.4 149.0 -178.1 -144.3 -110.2 -76.3 Rn/50 0.19 0.17 0.16 0.15 0.15 0.14 0.12 0.07 0.13 0.07 0.05 0.05 0.07 0.13 0.23 Ga dB 20.9 19.4 19.2 17.9 17.3 17.0 16.2 15.4 14.1 12.8 11.7 10.8 9.9 9.2 8.6
MSG/MAG and S21 (dB)
30 25 20 15 10 5 0 -5 0 5 10 15 20 FREQUENCY (GHz)
S21 MAG MSG
Figure 20. MSG/MAG and |S21|2 vs. Frequency at 2 V, 15 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
9
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 30 mA
Freq. GHz 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 Mag. 0.99 0.96 0.94 0.88 0.85 0.82 0.76 0.70 0.61 0.56 0.55 0.55 0.56 0.60 0.64 0.68 0.72 0.74 0.77 0.82 0.83 0.85 0.87 S11 Ang. -20.95 -32.34 -42.36 -61.09 -69.98 -78.53 -95.14 -111.48 -143.89 -174.55 157.19 129.18 104.19 81.48 62.07 43.83 25.46 6.81 -6.74 -17.21 -29.31 -41.30 -56.87 dB 18.17 18.02 17.77 17.18 16.85 16.50 15.81 15.11 13.73 12.46 11.31 10.22 9.20 8.15 7.24 6.29 5.27 4.14 3.01 1.94 0.87 -0.15 -1.24 S21 Mag. 8.10 7.96 7.73 7.22 6.96 6.69 6.17 5.69 4.86 4.20 3.68 3.24 2.88 2.56 2.30 2.06 1.84 1.61 1.41 1.25 1.11 0.98 0.87 Ang. 163.18 153.79 145.67 130.36 123.20 116.28 103.17 90.88 68.24 47.48 28.10 9.28 -8.75 -26.37 -43.37 -60.90 -78.22 -94.88 -110.07 -125.15 -140.80 -154.83 -170.03 dB -33.56 -30.17 -27.96 -25.04 -24.01 -23.22 -21.94 -21.01 -19.83 -19.02 -18.49 -18.13 -17.79 -17.59 -17.33 -17.20 -17.14 -17.33 -17.65 -17.86 -18.06 -18.13 -18.56 S12 Mag. 0.021 0.031 0.040 0.056 0.063 0.069 0.080 0.089 0.102 0.112 0.119 0.124 0.129 0.132 0.136 0.138 0.139 0.136 0.131 0.128 0.125 0.124 0.118 S22 Ang. 77.39 70.55 65.08 54.79 50.12 45.58 37.15 29.29 14.76 1.63 -10.98 -23.67 -34.72 -46.33 -57.43 -68.78 -81.32 -93.11 -103.06 -112.88 -123.55 -134.43 -144.88 Mag. 0.49 0.47 0.46 0.43 0.41 0.39 0.36 0.34 0.28 0.23 0.17 0.13 0.11 0.11 0.13 0.18 0.24 0.31 0.38 0.43 0.49 0.54 0.60 Ang. -15.99 -22.00 -29.03 -42.64 -48.96 -55.19 -66.91 -77.74 -97.29 -117.24 -139.78 -169.09 155.22 112.23 77.30 51.74 32.67 17.81 0.45 -15.44 -29.37 -38.55 -49.70 MSG/MAG dB 25.87 24.10 22.86 21.11 20.42 19.86 18.87 18.06 16.78 15.74 14.90 14.17 11.98 10.82 10.15 9.51 8.77 7.87 7.08 7.06 6.13 5.89 5.39
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 30 mA Freq. Fmin opt GHz dB Mag. Ang. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.11 0.15 0.16 0.22 0.25 0.27 0.33 0.39 0.52 0.64 0.77 0.90 1.02 1.15 1.28 0.87 0.81 0.80 0.73 0.69 0.66 0.60 0.54 0.45 0.39 0.34 0.33 0.33 0.36 0.40 2.7 12.1 14.5 26.3 33.4 38.1 50.6 64.2 94.0 126.5 160.6 -164.7 -130.3 -97.5 -67.0 Rn/50 0.18 0.17 0.16 0.15 0.15 0.14 0.13 0.12 0.10 0.07 0.05 0.06 0.10 0.18 0.30 Ga dB 21.6 20.2 19.9 18.7 18.0 17.7 17.0 16.2 14.8 13.5 12.4 11.4 10.5 9.7 9.1
MSG/MAG and S21 (dB)
30 25 20 15 10 5 0 -5 0 5 10 15 20 FREQUENCY (GHz)
S21 MAG MSG
Figure 21. MSG/MAG and |S21|2 vs. Frequency at 2 V, 30 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
10
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 10 mA
Freq. GHz 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 Mag. 0.99 0.97 0.95 0.91 0.88 0.86 0.81 0.75 0.66 0.60 0.58 0.56 0.57 0.60 0.64 0.68 0.71 0.74 0.77 0.82 0.82 0.84 0.86 S11 Ang. -18.76 -29.12 -38.28 -55.52 -63.78 -71.79 -87.55 -103.15 -134.65 -165.16 166.12 137.25 111.11 87.10 66.58 47.31 28.18 9.02 -4.82 -15.65 -28.00 -40.11 -55.87 dB 16.07 15.97 15.79 15.34 15.09 14.82 14.27 13.71 12.56 11.45 10.43 9.44 8.51 7.51 6.64 5.76 4.81 3.71 2.61 1.60 0.51 -0.55 -1.68 S21 Mag. 6.36 6.29 6.16 5.85 5.68 5.51 5.17 4.85 4.25 3.74 3.32 2.97 2.66 2.38 2.15 1.94 1.74 1.53 1.35 1.20 1.06 0.94 0.82 Ang. 164.73 155.93 148.37 133.87 126.95 120.22 107.29 95.00 71.95 50.50 30.44 10.91 -7.80 -26.05 -43.52 -61.59 -79.58 -96.96 -112.95 -128.77 -145.23 -160.01 -176.05 dB -32.77 -29.37 -27.13 -24.01 -22.97 -22.05 -20.82 -19.83 -18.71 -18.13 -17.79 -17.65 -17.59 -17.65 -17.65 -17.65 -17.72 -17.99 -18.34 -18.56 -18.71 -18.71 -19.25 S12 Mag. 0.023 0.034 0.044 0.063 0.071 0.079 0.091 0.102 0.116 0.124 0.129 0.131 0.132 0.131 0.131 0.131 0.130 0.126 0.121 0.118 0.116 0.116 0.109 S22 Ang. 76.79 70.22 64.53 54.04 49.13 44.06 34.85 25.98 9.56 -5.10 -19.00 -32.32 -43.61 -55.14 -65.42 -76.27 -87.47 -98.60 -107.41 -116.63 -126.02 -136.14 -146.13 Mag. 0.65 0.63 0.62 0.59 0.57 0.56 0.52 0.49 0.42 0.35 0.29 0.23 0.18 0.13 0.10 0.11 0.16 0.23 0.29 0.35 0.42 0.49 0.55 Ang. -13.67 -19.08 -25.28 -37.48 -43.28 -49.01 -59.84 -69.88 -87.88 -105.14 -122.61 -141.22 -162.07 172.01 139.11 93.44 57.88 35.32 13.11 -4.62 -19.61 -29.62 -41.92 MSG/MAG dB 24.42 22.70 21.46 19.68 19.00 18.43 17.55 16.77 15.63 14.79 14.11 13.55 12.81 10.75 9.98 9.32 8.54 7.59 6.76 6.79 5.79 5.54 5.05
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 10 mA Freq. Fmin opt GHz dB Mag. Ang. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.12 0.16 0.17 0.22 0.26 0.28 0.33 0.39 0.49 0.60 0.71 0.81 0.92 1.03 1.13 0.87 0.82 0.81 0.75 0.71 0.68 0.62 0.57 0.49 0.43 0.38 0.36 0.34 0.34 0.35 4.7 13.2 15.3 25.9 32.3 36.5 47.7 59.6 85.4 113.6 143.7 175.6 -151.3 -117.3 -82.7 Rn/50 0.21 0.19 0.19 0.17 0.16 0.16 0.14 0.13 0.10 0.08 0.05 0.05 0.07 0.12 0.21 Ga dB 20.0 19.0 18.8 17.8 17.2 16.7 15.9 15.1 13.7 12.5 11.4 10.4 9.6 8.9 8.4
MSG/MAG and S21 (dB)
30 25 20 15 10 5 0 -5 0 5 10 15 20 FREQUENCY (GHz)
S21 MAG MSG
Figure 22. MSG/MAG and |S21|2 vs. Frequency at 3 V, 10 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
11
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 15 mA
Freq. GHz 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 Mag. 0.99 0.96 0.94 0.90 0.87 0.84 0.78 0.73 0.63 0.58 0.56 0.55 0.56 0.60 0.64 0.68 0.71 0.74 0.77 0.82 0.82 0.85 0.86 S11 Ang. -19.76 -30.58 -40.14 -58.04 -66.61 -74.88 -91.02 -106.95 -138.86 -169.42 162.05 133.54 107.88 84.56 64.57 45.84 27.11 8.18 -5.58 -16.18 -28.41 -40.49 -56.20 dB 17.20 17.08 16.86 16.35 16.06 15.75 15.13 14.50 13.24 12.05 10.97 9.93 8.96 7.95 7.06 6.16 5.19 4.09 2.98 1.96 0.88 -0.15 -1.25 S21 Mag. 7.24 7.14 6.97 6.57 6.35 6.13 5.71 5.31 4.59 4.00 3.53 3.14 2.81 2.50 2.26 2.03 1.82 1.60 1.41 1.25 1.11 0.98 0.87 Ang. 164.03 154.94 147.12 132.22 125.16 118.36 105.32 93.02 70.17 49.09 29.39 10.23 -8.11 -26.04 -43.28 -61.06 -78.75 -95.88 -111.57 -127.09 -143.31 -157.87 -173.65 dB -33.15 -29.90 -27.54 -24.58 -23.48 -22.62 -21.41 -20.45 -19.41 -18.79 -18.34 -18.06 -17.92 -17.86 -17.72 -17.59 -17.59 -17.79 -18.06 -18.27 -18.42 -18.49 -18.86 S12 Mag. 0.022 0.032 0.042 0.059 0.067 0.074 0.085 0.102 0.107 0.115 0.121 0.125 0.127 0.128 0.130 0.132 0.132 0.129 0.125 0.122 0.120 0.119 0.114 S22 Ang. 76.95 69.88 64.59 54.00 49.23 44.39 35.29 27.00 11.47 -2.18 -15.36 -27.97 -38.89 -50.41 -60.57 -71.45 -83.32 -94.36 -103.78 -113.43 -123.35 -134.06 -144.46 Mag. 0.60 0.58 0.57 0.54 0.52 0.50 0.47 0.44 0.37 0.31 0.24 0.19 0.14 0.11 0.09 0.12 0.18 0.25 0.31 0.37 0.44 0.50 0.56 Ang. -14.39 -20.00 -26.48 -39.05 -45.00 -50.83 -61.71 -71.87 -89.81 -107.23 -125.21 -145.42 -168.81 158.79 118.59 75.36 46.94 27.91 7.94 -8.87 -23.42 -32.96 -44.64 MSG/MAG dB 25.17 23.47 22.20 20.47 19.78 19.19 18.27 17.47 16.32 15.42 14.66 14.00 12.23 10.87 10.16 9.55 8.80 7.86 7.09 7.04 6.09 5.87 5.41
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 15 mA Freq. Fmin opt GHz dB Mag. Ang. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.11 0.15 0.16 0.21 0.24 0.26 0.31 0.37 0.47 0.58 0.68 0.79 0.89 1.00 1.10 0.86 0.81 0.80 0.73 0.69 0.66 0.60 0.55 0.46 0.40 0.36 0.33 0.32 0.32 0.33 3.5 12.1 14.3 25.1 31.6 35.9 47.2 59.4 86.0 115.4 146.8 179.8 -146.1 -111.5 -76.8 Rn/50 0.17 0.16 0.16 0.15 0.14 0.20 0.17 0.15 0.11 0.07 0.05 0.05 0.07 0.13 0.22 Ga dB 21.2 19.9 19.6 18.2 17.6 17.2 16.3 15.6 14.2 12.9 11.8 10.8 10.0 9.3 8.8
MSG/MAG and S21 (dB)
30 25 20 15 10 5 0 -5 0 5 10 15 20 FREQUENCY (GHz)
S21 MAG MSG
Figure 23. MSG/MAG and |S21|2 vs. Frequency at 3 V, 15 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
12
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA
Freq. GHz 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 Mag. 0.99 0.96 0.93 0.88 0.85 0.82 0.76 0.70 0.61 0.56 0.54 0.54 0.55 0.59 0.63 0.67 0.71 0.74 0.77 0.82 0.82 0.85 0.87 S11 Ang. -21.01 -32.39 -42.42 -61.18 -70.01 -78.57 -95.09 -111.30 -143.48 -174.00 157.98 130.06 105.20 82.53 63.18 44.96 26.64 7.94 -5.53 -16.02 -28.09 -40.02 -55.63 dB 18.45 18.29 18.03 17.42 17.09 16.74 16.03 15.32 13.93 12.65 11.50 10.42 9.42 8.39 7.49 6.56 5.58 4.46 3.36 2.33 1.25 0.23 -0.85 S21 Mag. 8.36 8.21 7.97 7.43 7.15 6.87 6.33 5.83 4.97 4.29 3.76 3.32 2.96 2.63 2.37 2.13 1.90 1.67 1.47 1.31 1.16 1.03 0.91 Ang. 163.08 153.62 145.49 130.11 122.91 116.00 102.87 90.60 68.04 47.37 28.09 9.32 -8.66 -26.26 -43.25 -60.82 -78.23 -95.07 -110.42 -125.79 -141.72 -156.00 -171.48 dB -33.98 -30.46 -28.40 -25.35 -24.44 -23.61 -22.38 -21.41 -20.26 -19.58 -19.02 -18.64 -18.34 -18.06 -17.79 -17.52 -17.46 -17.65 -17.86 -17.99 -18.06 -18.06 -18.49 S12 Mag. 0.020 0.030 0.038 0.054 0.060 0.066 0.076 0.085 0.097 0.105 0.112 0.117 0.121 0.125 0.129 0.133 0.134 0.131 0.128 0.126 0.125 0.125 0.119 S22 Ang. 76.89 69.94 64.80 54.32 49.77 45.15 36.87 29.08 14.96 2.38 -10.00 -22.21 -32.79 -44.11 -54.57 -66.16 -78.18 -89.74 -99.72 -109.60 -120.39 -131.03 -141.69 Mag. 0.53 0.51 0.50 0.47 0.45 0.43 0.40 0.37 0.31 0.25 0.19 0.14 0.11 0.09 0.09 0.14 0.20 0.27 0.34 0.39 0.46 0.51 0.57 Ang. -15.23 -21.01 -27.72 -40.61 -46.56 -52.43 -63.37 -73.44 -91.21 -108.94 -128.04 -151.53 179.40 138.30 95.15 62.17 39.86 23.41 5.08 -11.42 -25.74 -35.29 -46.81 MSG/MAG dB 26.21 24.36 23.22 21.39 20.72 20.17 19.21 18.36 17.10 16.11 15.26 13.78 12.10 11.00 10.36 9.76 9.05 8.14 7.40 7.41 6.44 6.19 5.71
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 30 mA Freq. Fmin opt GHz dB Mag. Ang. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.11 0.16 0.17 0.23 0.27 0.28 0.35 0.41 0.53 0.66 0.79 0.91 1.04 1.17 1.29 0.87 0.81 0.79 0.72 0.68 0.65 0.59 0.53 0.43 0.37 0.33 0.31 0.31 0.33 0.38 3.5 12.5 14.7 25.9 32.6 37.1 49.3 62.5 91.6 123.4 157.1 -168.3 -133.7 -100.0 -68.1 Rn/50 0.18 0.17 0.17 0.16 0.15 0.15 0.14 0.12 0.09 0.07 0.05 0.06 0.10 0.17 0.28 Ga dB 21.6 20.5 20.2 18.9 18.3 17.9 17.0 16.3 14.9 13.6 12.4 11.4 10.6 9.9 9.3
MSG/MAG and S21 (dB)
30 25 20 15
MAG MSG
10 5 0 -5 0
S21
5
10
15
20
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S21|2 vs. Frequency at 3 V, 30 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
13
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 30 mA
Freq. GHz 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 Mag. 0.99 0.96 0.94 0.88 0.85 0.82 0.76 0.71 0.62 0.57 0.55 0.55 0.57 0.60 0.64 0.68 0.72 0.74 0.77 0.82 0.82 0.85 0.86 S11 Ang. -21.11 -32.57 -42.70 -61.55 -70.46 -79.07 -95.78 -112.14 -144.46 -174.93 157.13 129.56 104.96 82.47 63.23 45.01 26.69 8.00 -5.46 -16.18 -28.39 -40.51 -56.36 dB 18.54 18.38 18.13 17.53 17.20 16.84 16.14 15.43 14.04 12.76 11.61 10.54 9.55 8.53 7.64 6.74 5.79 4.71 3.64 2.65 1.62 0.64 -0.44 S21 Mag. 8.45 8.30 8.07 7.53 7.24 6.95 6.41 5.91 5.03 4.34 3.81 3.37 3.00 2.67 2.41 2.17 1.95 1.72 1.52 1.36 1.21 1.08 0.95 Ang. 163.20 153.72 145.56 130.19 123.00 116.04 102.91 90.63 68.03 47.35 28.07 9.35 -8.62 -26.19 -43.13 -60.63 -78.09 -95.00 -110.50 -126.04 -142.14 -156.61 -172.55 dB -33.98 -30.75 -28.64 -25.68 -24.58 -23.88 -22.62 -21.72 -20.72 -20.00 -19.49 -19.25 -18.94 -18.79 -18.49 -18.27 -18.13 -18.27 -18.42 -18.49 -18.49 -18.49 -18.86 S12 Mag. 0.020 0.029 0.037 0.052 0.059 0.064 0.074 0.082 0.092 0.100 0.106 0.109 0.113 0.115 0.119 0.122 0.124 0.122 0.120 0.119 0.119 0.119 0.114 S22 Ang. 77.63 70.15 64.68 53.94 49.29 44.64 36.30 28.32 13.98 1.12 -11.07 -23.07 -33.33 -44.34 -54.44 -65.68 -77.35 -88.59 -98.13 -108.03 -118.41 -129.54 -140.19 Mag. 0.56 0.54 0.53 0.50 0.48 0.46 0.43 0.40 0.34 0.28 0.22 0.17 0.13 0.09 0.07 0.09 0.15 0.22 0.28 0.34 0.40 0.46 0.52 Ang. -14.66 -20.35 -26.91 -39.45 -45.29 -50.94 -61.54 -71.17 -87.95 -104.23 -120.69 -139.29 -160.54 169.67 128.74 78.47 47.96 28.53 8.38 -8.46 -22.93 -32.29 -43.97 MSG/MAG dB 26.26 24.55 23.38 21.61 20.90 20.36 19.38 18.58 17.38 16.38 15.55 14.19 12.47 11.33 10.70 10.10 9.40 8.47 7.69 7.76 6.75 6.53 6.00
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 30 mA Freq. Fmin opt GHz dB Mag. Ang. 0.5 0.10 0.90 3.5 0.9 0.14 0.85 12.5 1.0 0.16 0.83 14.7 1.5 0.21 0.77 25.9 1.8 0.25 0.73 32.6 2.0 0.28 0.70 37.1 2.5 0.33 0.64 49.1 3.0 0.38 0.58 62.0 4.0 0.49 0.48 90.3 5.0 0.62 0.40 121.2 6.0 0.74 0.35 154.0 7.0 0.87 0.32 -172.2 8.0 0.99 0.31 -138.0 9.0 1.11 0.34 -104.2 10.0 1.24 0.39 -71.6 Rn/50 0.22 0.21 0.20 0.18 0.17 0.17 0.15 0.14 0.10 0.07 0.05 0.06 0.09 0.15 0.26 Ga dB 20.7 19.7 19.5 18.4 17.8 17.5 16.7 16.0 14.7 13.5 12.5 11.5 10.7 10.0 9.5
30 25
MSG/MAG and S21 (dB)
MSG
20 15
MAG
10 5 0 -5 0
S21
5
10
15
20
FREQUENCY (GHz)
Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4 V, 30 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
14
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq. GHz 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 Mag. 0.99 0.96 0.94 0.88 0.85 0.82 0.76 0.70 0.61 0.57 0.55 0.55 0.57 0.60 0.64 0.69 0.72 0.75 0.78 0.83 0.84 0.87 0.88 S11 Ang. -21.27 -32.77 -42.95 -61.92 -70.88 -79.55 -96.36 -112.86 -145.47 -176.15 155.85 128.25 103.61 81.11 62.01 43.90 25.78 7.31 -6.12 -16.62 -28.78 -40.91 -56.66 dB 18.15 17.99 17.74 17.13 16.79 16.45 15.74 15.03 13.64 12.35 11.21 10.14 9.16 8.14 7.25 6.37 5.43 4.37 3.30 2.29 1.25 0.21 -0.92 S21 Mag. 8.09 7.94 7.71 7.19 6.91 6.64 6.12 5.64 4.81 4.15 3.64 3.21 2.87 2.55 2.30 2.08 1.87 1.65 1.46 1.30 1.16 1.03 0.90 Ang. 163.09 153.59 145.40 129.98 122.76 115.80 102.60 90.26 67.52 46.76 27.45 8.68 -9.34 -27.02 -44.01 -61.57 -79.17 -96.36 -112.19 -127.94 -144.27 -159.19 -175.28 dB -34.89 -31.70 -29.37 -26.56 -25.51 -24.73 -23.48 -22.62 -21.51 -20.82 -20.26 -19.83 -19.41 -19.09 -18.71 -18.27 -17.92 -17.92 -17.92 -17.86 -17.79 -17.79 -17.99 S12 Mag. 0.018 0.026 0.034 0.047 0.053 0.058 0.067 0.074 0.084 0.091 0.097 0.102 0.107 0.111 0.116 0.122 0.127 0.127 0.127 0.128 0.129 0.129 0.126 S22 Ang. 77.28 70.40 65.05 55.14 50.40 46.34 38.10 30.61 17.18 5.47 -5.83 -17.10 -26.34 -36.93 -46.43 -57.09 -68.92 -80.43 -90.26 -100.79 -112.14 -123.71 -134.88 Mag. 0.54 0.53 0.51 0.48 0.47 0.45 0.42 0.39 0.34 0.29 0.24 0.19 0.15 0.11 0.07 0.06 0.10 0.18 0.25 0.31 0.39 0.46 0.52 Ang. -13.50 -18.54 -24.50 -35.90 -41.17 -46.33 -55.86 -64.53 -79.32 -93.48 -107.07 -121.43 -137.04 -156.16 178.65 113.63 60.75 35.69 13.24 -4.12 -19.12 -28.89 -40.92 MSG/MAG dB 26.52 24.83 23.55 21.84 21.15 20.59 19.61 18.82 17.58 16.59 15.74 13.17 11.94 10.99 10.38 9.88 9.26 8.35 7.57 7.78 6.73 6.65 6.06
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA Freq. Fmin opt GHz dB Mag. Ang. 0.5 0.22 0.84 4.4 0.9 0.30 0.78 15.6 1.0 0.32 0.77 18.4 1.5 0.42 0.70 32.4 1.8 0.48 0.65 40.8 2.0 0.52 0.63 46.4 2.5 0.63 0.56 61.0 3.0 0.73 0.51 76.6 4.0 0.94 0.44 109.9 5.0 1.15 0.40 144.8 6.0 1.35 0.39 -179.8 7.0 1.56 0.40 -145.5 8.0 1.77 0.43 -113.7 9.0 1.98 0.47 -85.6 10.0 2.18 0.53 -62.6 Rn/50 0.29 0.29 0.28 0.26 0.25 0.24 0.21 0.19 0.13 0.09 0.08 0.13 0.26 0.48 0.79 Ga dB 22.5 21.3 21.0 19.8 19.2 18.8 17.8 17.0 15.5 14.1 12.9 11.9 11.0 10.3 9.8
30 25
MSG/MAG and S21 (dB)
MSG
20 15
MAG
10 5 0 -5 0
S21
5
10
15
20
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs. Frequency at 4 V, 60 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 3. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
15
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50, to an impedance represented by the reflection coefficient o. The designer must design a matching network that will present o to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Fmin only when the device is
presented with o. If the reflection coefficient of the matching network is other than o, then the noise figure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn |s - o | 2 Zo (|1 + o| 2) (1 - s| 2) Where Rn /Zo is the normalized noise resistance, o is the optimum reflection coefficient required to produce Fmin and s is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower o as compared to narrower gate width devices.
Typically for FETs, the higher o usually infers that an impedance much higher than 50 is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Agilent Application 1085.
16
ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1 - 6.0 GHz
EQUATION La=0.1 nH EQUATION Lb=0.1 nH EQUATION Lc=0.8 nH EQUATION Ld=0.6 nH EQUATION Rb=0.1 OH EQUATION Ca=0.15 pF EQUATION Cb=0.15 pF L GATE_IN L=Lc LOSSYL L=Lb R=Rb C C=Ca G L SOURCE L=La S LOSSYL L=Lb R=Rb LOSSYL L=Lb R=Rb L=Ld L DRAIN_OUT R R=0.1 OH LOSSYL L=Lb R=Rb LOSSYL L=Lb R=Rb C=Cb L SOURCE L=La *.5 C D
This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to
the measured data in this data sheet. For future improvements Agilent reserves the right to change these models without prior notice.
ATF-35143 Die Model
MESFET MODEL * * STATZMODEL = FET
IDS model
NFET=yes PFET= IDSMOD=3 VTO=-0.95 BETA= Beta LAMBDA=0.09 ALPHA=4.0 B=0.8 TNOM=27 IDSTC= VBI=.7
Gate model
DELTA=.2 GSCAP=3 CGS=cgs pF GDCAP=3 GCD=Cgd pF
Parasitics
RG=1 RD=Rd RS=Rs LG=Lg nH LD=Ld nH LS=Ls nH CDS=Cds pF CRF=.1 RC=Rc
Breakdown
GSFWD=1 GSREV=0 GDFWD=1 GDREV=0 VJR=1 IS=1 nA IR=1 nA IMAX=.1 XTI= N= EG=
Noise
FNC=01e+6 R=.17 P=.65 C=.2
Model scal factors (W=FET width in microns)
XX
D
EQUATION Cds=0.01 * W/200 EQUATION Beta=0.06 * W/200 EQUATION Rd=200/W EQUATION Rs=.5 * 200/W EQUATION Cgs=0.2 * W/200 EQUATION Cgd=0.04 * W/200 EQUATION Lg=0.03 * 200/W EQUATION Ld=0.03 * 200/W EQUATION Ls=0.01 * 200/W EQUATION Rc=500 * 200/W NFETMESFET
XX
G
MODEL=FET
S
XX
S
W=400 m
17
Part Number Ordering Information
Part Number ATF-35143-TR1 ATF-35143-TR2 ATF-35143-BLK No. of Devices 3000 10000 100 Container 7" Reel 13" Reel antistatic bag
Package Dimensions
Outline 43 (SOT-343/SC-70 4 lead)
1.30 (.051) REF
1.15
2.00 0.05
1.30 0.02
2.60 (.102) 1.30 (.051)
0.60 TYP 1.15 2.00 0.05
1.15 (.045) REF 0.55 (.021) TYP 0.85 (.033)
1.25 0.02 0.375 TYP 0.90 0.05 x.xx REF 0.29 0.050 0.30 TYP 0.6
0.01
0.13 TYP
DIMENSIONS ARE IN MILLIMETERS (INCHES)
18
Device Orientation
REEL TOP VIEW 4 mm END VIEW
CARRIER TAPE USER FEED DIRECTION COVER TAPE
8 mm
5PX
5PX
5PX
5PX
Tape Dimensions
For Outline 4T
P P0 D P2
E
F W C
D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
8 MAX.
K0
5 MAX.
A0
B0
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2
SIZE (mm) 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 1.55 0.05 4.00 0.10 1.75 0.10 8.00 0.30 0.255 0.013 5.4 0.10 0.062 0.001 3.50 0.05 2.00 0.05
SIZE (INCHES) 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 0.061 0.002 0.157 0.004 0.069 0.004 0.315 0.012 0.010 0.0005 0.205 0.004 0.0025 0.00004 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE COVER TAPE DISTANCE
www.semiconductor.agilent.com Data subject to change. Copyright (c) 2000 Agilent Technologies, Inc. Obsoletes 5968-5430E 5968-7826E (2/00)

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